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BTS7904B Datasheet, PDF (1/13 Pages) Infineon Technologies AG – OptiMOS -T PN Half Bridge
OptiMOS® -T PN Half Bridge
Features
• Dual p- and n-channel MOSFET
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
• Ultra low R DS(on)
• 150 °C operating temperature
Product Summary
V DS
R
5)
DS(on),max
ID
BTS7904B
P
N
-30 55 V
12.7 11.7 mΩ
-40 40 A
PG-TO263-5-1
Type
BTS7904B
Package
PG-TO263-5-1
Marking
7904B
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current1)
Pulsed drain current2)
Avalanche energy, single pulse2)
Avalanche current, single pulse
Gate source voltage
Power dissipation2)
ID
I D,pulse
E AS
IAS
V GS
P tot
T C=25 °C
T C=100 °C
T C=25 °C
I D=±20 A
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
Value
Unit
P
N
-40
40
A
-40
40
-160
160
350
200 mJ
-40
40
A
-16 / +5 +16 / -163) V
96
69
W
-55 ... 150
°C
55/150/56
1.0
page 1
2008-07-18