BTS781GP Datasheet, PDF (1/17 Pages) Infineon Technologies AG – TrilithIC

TrilithIC
BTS 781 GP
Data Sheet
1
Overview
1.1 Features
• Quad D-MOS switch
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low R_{DS ON}: 26 mΩ high-side switch, 14 mΩ low-side
switch (typical values @ 25 °C)
• Maximum peak current: typ. 42 A @ 25 °C=
• Very low quiescent current: typ. 4 µA @ 25 °C=
• Small outline, thermal optimized PowerPak
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag for over temperature
• Open load detection in Off-mode
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
P-TO263-15-1
Type
BTS 781 GP
Ordering Code
Q67006-A9526
Package
P-TO263-15-1
1.2 Description
The BTS 781 GP is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 781 GP can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS^® technology
which combines low R_{DS ON} vertical DMOS power stages with CMOS control circuit. The
high-side switch is fully protected and contains the control and diagnosis circuit. To
achieve low R_{DS ON} and fast switching performance, the low-side switches are
manufactured in S-FET 2 logic level technology. The equivalent standard product is the
SPD30N06S2L-13.
Data Sheet
1
2002-06-28