|
BTS7811K Datasheet, PDF (1/18 Pages) Infineon Technologies AG – TrilithIC | |||
|
TrilithIC
BTS 7811K
Data Sheet
1
Overview
1.1 Features
⢠Quad D-MOS switch
⢠Free configurable as bridge or quad-switch
⢠Optimized for DC motor management applications
⢠Low RDS ON: 26 m⦠high-side switch, 14 m⦠low-side
switch (typical values @ 25 °C)
⢠Maximum peak current: typ. 42 A @ 25 °C
P-TO263-15-1
⢠Very low quiescent current: typ. 4 µA @ 25 °C
⢠Small outline, thermal optimized PowerPak
⢠Load and GND-short-circuit-protection
⢠Operates up to 40 V
⢠Status flag for over temperature
⢠Open load detection in Off-mode
⢠Overtemperature shut down with hysteresis
⢠Internal clamp diodes
⢠PWM capability up to 25kHz
⢠Cross current free operation up to 13A load current (typ. value @ 12V/150°C)
⢠Under-voltage detection with hysteresis
Type
BTS 7811K
Package
P-TO263-15-1
1.2 Description
The BTS 7811K is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7811K can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS® technology
which combines low RDS ON vertical DMOS power stages with CMOS control circuit. The
protected high-side switch contains the control and diagnosis circuit. To achieve low
RDS ON and fast switching performance, the low-side switches are manufactured in S-
FET 2 logic level technology.
Data Sheet
1
Rev. 2.0, 2006-07-18
|
▷ |