BTS7750GP Datasheet, PDF (1/16 Pages) Infineon Technologies AG – TrilithIC

TrilithIC
BTS 7750 GP
Data Sheet
1
Overview
1.1 Features
• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low R_{DS ON}: 70 mτ high-side switch, 45 mτ low-
side switch (typical values @ 25 C)
• Maximum peak current: typ. 12 A @ 25 C=
• Very low quiescent current: typ. 5 ←A @ 25 C=
• Small outline, thermal optimized PowerPak
• Full short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
• PWM frequencies up to 1 kHz
P-TO263-15-1
Type
BTS 7750 GP
Ordering Code
Q67006-A9402
Package
P-TO263-15-1
1.2 Description
The BTS 7750 GP is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7750 GP can be used in H-bridge- as well as in any other
configuration. Both the double high-side and the two low-side switches of the
BTS 7750 GP are manufactured in SMART SIPMOS^® technology which combines low
R_{DS ON} vertical DMOS power stages with CMOS control circuitry. The high-side switch is
fully protected and contains the control and diagnosis circuitry. Also the low-side
switches are fully protected, the equivalent standard product is the BTS 134 D.
In contrast to the BTS 7750 G, which consists of the same chips in an P-DSO-28
package, the P-TO263-15-1 PowerPack offers a much lower thermal resistance, which
opens up applications with even higher currents in the automotive and industrial area.
Data Sheet
1
2001-02-01