BTS7710G Datasheet, PDF (1/16 Pages) Infineon Technologies AG – TrilithIC

TrilithIC
BTS 7710 G
Data Sheet
1
Overview
1.1 Features
• Quad D-MOS switch driver
• Free configurable as bridge or quad-switch
• Optimized for DC motor management applications
• Low R_{DS ON}: 70 mτ high-side switch, 40 mτ low-side
switch (typical values @ 25 C)
• Maximum peak current: typ. 15 A @ 25 C=
• Very low quiescent current: typ. 5 ←A @ 25 C=
• Small outline, enhanced power P-DSO-package
• Load and GND-short-circuit-protection
• Operates up to 40 V
• Status flag diagnosis
• Overtemperature shut down with hysteresis
• Internal clamp diodes
• Isolated sources for external current sensing
• Under-voltage detection with hysteresis
• PWM frequencies up to 50 kHz
P-DSO-28-14
Type
BTS 7710 G
Ordering Code
Q67007-A9399
Package
P-DSO-28-14
1.2 Description
The BTS 7710 G is part of the TrilithIC family containing three dies in one package:
One double high-side switch and two low-side switches. The drains of these three
vertical DMOS chips are mounted on separated leadframes. The sources are connected
to individual pins, so the BTS 7710 G can be used in H-bridge- as well as in any other
configuration. The double high-side is manufactured in SMART SIPMOS^® technology
which combines low R_{DS ON} vertical DMOS power stages with CMOS control circuitry.
The high-side switch is fully protected and contains the control and diagnosis circuitry.
To achieve low R_{DS ON} and fast switching performance, the low-side switches are
manufactured in S-FET logic level technology. The equivalent standard product is the
BUZ 103 SL.
In contrast to the BTS 7710 GP, which consists of the same chips in an P-TO263-15
package, the P-DSO-28-14 package offers a smaller outline and a lower price for
applications, which do not need the thermal properties of the P-TO263-15.
Data Sheet
1
2001-02-01