BTS660P Datasheet, PDF (1/16 Pages) Infineon Technologies AG – Smart Highside High Current Power Switch

PROFET® Data Sheet BTS660P
Smart Highside High Current Power Switch
Reversave
• _{Reverse battery protection by self turn on of}
power MOSFET
Features
• _{Overload protection}
• _{Current limitation}
• _{Short circuit protection}
• _{Over temperature protection}
• _{Over voltage protection (including load dump)}
• _{Clamp of negative voltage at output}
• _{Fast deenergizing of inductive loads} ¹⁾
• _{Low ohmic inverse current operation}
• _{Diagnostic feedback with load current sense}
• _{Open load detection via current sense}
• _{Loss of Vbb protection}²⁾
• _{Electrostatic discharge (ESD) protection}
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
V_bb(AZ)
V_ON(CL)
V_bb(on)
R_ON
I_L(ISO)
I_L(SC)
I_L : I_IS
70 V
62 ^V
5.0 ... 58 V
9 mΩ
44 A
90 A
13 000
TO 220-7SMD
Application
• _{Power switch with current sense diagnostic}
feedback for up to 48 V DC grounded loads
• _{Most suitable for loads with high inrush current}
7
7
1
Standard
1
SMD
like lamps and motors; all types of resistive and
inductive loads
• _{Replaces electromechanical relays, fuses and discrete circuits}
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 _IN
ESD
I _IN
Logic
V_IN
V_IS
Logic GND
I _IS
IS
5
RIS
R _bb
Overvoltage Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT ^1,2,6,7
I_L
Load
Temperature
sensor
PROFET^
Load GND
1_{) With additional external diode.}
2_{) Additional external diode required for energized inductive loads (see page 9).}
Infineon Technologies AG
Page 1
2003-Oct-01