BTS6510 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Smart Highside High Current Power Switch

Data Sheet BTS6510
Smart Highside High Current Power Switch
Reversave
• _{Reverse battery protection by self turn on of}
power MOSFET
Features
• _{Overload protection}
• _{Current limitation}
• _{Short circuit protection}
• _{Overtemperature protection}
• _{Overvoltage protection (including load dump)}
• _{Clamp of negative voltage at output}
• _{Fast deenergizing of inductive loads} ¹)
• _{Low ohmic inverse current operation}
• _{Diagnostic feedback with load current sense}
• _{Open load detection via current sense}
• _{Loss of Vbb protection}²)
• _{Electrostatic discharge (ESD) protection}
Product Summary
Operating voltage
On-state resistance
Noinal current
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(on)
RON
IL(nom)
IL(ISO)
IL(SC)
IL : I_IS
5.0 ... 34 V
6.0 mΩ
17 A
70 A
130 A
14 000
TO 220-7
Application
• _{Power switch with current sense diagnostic}
feedback for 12 V and 24 V DC grounded loads
• _{Most suitable for loads with high inrush current}
like lamps and motors; all types of resistive and inductive loads
• _{Replaces electromechanical relays, fuses and discrete circuits}
7
1
SM D
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS^ chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
3 _IN
ESD
I _IN
Logic
V_IN
V_IS
Logic GND
I _IS
IS
5
RIS
R _bb
Overvoltage Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
4 & Tab
+ Vbb
OUT ^1,2,6,7
I_L
Load
Temperature
sensor
PROFET^
Load GND
1_{) With additional external diode.}
2_{) Additional external diode required for energized inductive loads (see page 8).}
Infineon Technologies AG
Page 1of 15
2003-Oct-01