BTS640S2 Datasheet, PDF (1/15 Pages) Infineon Technologies AG – Smart Sense High-Side Power Switch

PROFET® BTS 640 S2
Smart Sense High-Side
Power Switch
Features
• _{Short circuit protection}
• _{Current limitation}
• _{Proportional load current sense}
• _{CMOS compatible input}
• _{Open drain diagnostic output}
• _{Fast demagnetization of inductive loads}
• _{Undervoltage and overvoltage shutdown with}
Product Summary
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
V_bb(on)
R_ON
I_L(ISO)
I_L(SCr)
Package
TO220-7-11
TO263-7-2
auto-restart and hysteresis
• _{Overload protection}
• _{Thermal shutdown}
• _{Overvoltage protection including load dump (with}
1
Standard (staggered)
1
SMD
external GND-resistor)
• _{Reverse battery protection (with external GND-resistor)}
• _{Loss of ground and loss of Vbb protection}
• _{Electrostatic discharge (ESD) protection}
5.0 ... 34 V
30 mΩ
12.6 A
24 A
TO220-7-12
1
Straight
Application
• _{µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads}
• _{All types of resistive, inductive and capacitve loads}
• _{Replaces electromechanical relays, fuses and discrete circuits}
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic
feedback, proportional sense of load current, monolithically integrated in Smart SIPMOS^ technology.
Providing embedded protective functions.
Block Diagram
3 IN
Voltage
source
V _Logic
Voltage
sensor
1 ST ^ESD
Logic
Overvoltage
protection
Current
limit
Gate
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
5 IS
I _IS
RIS
GND
2
Signal GND
Temperature
sensor
4
+ Vbb
Current
Sense
OUT ^{6, 7}
I_L
Load
RO
GND
PROFET^
Load GND
Semiconductor Group
Page 1 of 15
2003-Oct-01