BTS6163D Datasheet, PDF (1/16 Pages) Infineon Technologies AG – Smart Highside Power Switch

PROFET Data sheet BTS 6163 D
Smart Highside Power Switch
Reversave
• _{Reverse battery protection by self turn on of}
power MOSFET
Product Summary
Operating voltage
Vbb(on) 5.5 ... 62 V
Features
On-state resistance
RON
20 mΩ
• _{Short circuit protection with latch}
Nominal current
IL(nom)
5.5 A
• _{Current limitation}
• _{Overload protection}
• _{Thermal shutdown with restart}
• _{Overvoltage protection (including load dump)}
Load current (ISO)
Current limitation
Package
IL(ISO)
IL12(SC)
17 A
70 A
• _{Loss of ground protection}
• _{Loss of Vbb protection (with external diode for}
TO-252-5-1
(DPAK 5 pin; less than half the size as TO 220 SMD)
charged inductive loads)
• _{Very low standby current}
• _{Fast demagnetization of inductive loads}
• _{Electrostatic discharge (ESD) protection}
• _{Optimized static electromagnetic compatibility (EMC)}
Diagnostic Function
• _{Proportional load current sense (with defined fault signal in case of overload operation, overtemperature}
shutdown and/or short circuit shutdown)
Application
• _{Power switch with current sense diagnostic feedback for 42V and 24 V DC grounded loads}
• _{All types of resistive, inductive and capacitive loads}
• _{Replaces electromechanical relays, fuses and discrete circuits}
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS^ chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 _IN
ESD
Logic
R _bb
Overvoltage Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT ^{1, 5}
I_L
Load
I _IN
Temperature
sensor
V_IN
V_IS
Logic GND
I _IS
IS
4
RIS
PROFET^
Load GND
Infineon Technologies AG
Page 1 of 16
2003-Oct-01