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BTS555 Datasheet, PDF (1/16 Pages) Siemens Semiconductor Group – Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection) | |||
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PROFET® Data Sheet BTS555
Smart Highside High Current Power Switch Reversaveï
Reversaveï
⢠Reverse battery protection by self turn on of
power MOSFET
Features
⢠Overload protection
⢠Current limitation
⢠Short circuit protection
⢠Overtemperature protection
⢠Overvoltage protection (including load dump)
⢠Clamp of negative voltage at output
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
Vbb(AZ)
VON(CL)
Vbb(on)
RON1)
IL(ISO)
IL(SCp)
IL : IIS
62 V
44 V
5.0 ... 34 V
2.5 mâ¦
165 A
520 A
30 000
⢠Fast deenergizing of inductive loads 2)
⢠Low ohmic inverse current operation
⢠Diagnostic feedback with load current sense
⢠Open load detection via current sense
TO-218AB/5
TO-218AB-5-1
⢠Loss of Vbb protection3)
5
⢠Electrostatic discharge (ESD) protection
Application
⢠Power switch with current sense diagnostic
1
Straight leads
Staggered leads
feedback for 12 V and 24 V DC grounded loads
⢠Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and inductive loads
⢠Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOSï chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 IN
ESD
I IN
Logic
VIN
V IS
Logic GND
I IS
IS
4
RIS
R bb
Overvoltage Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT 1, 5
IL
Load
Temperature
sensor
PROFET
Load GND
1 ) Due to the different lead frame geometry Ron @25°C is 0.3 m⦠higher in staggered than in straight version,
and accordingly for other temperatures.
2 ) With additional external diode.
3) Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
1 of 16
2003-Oct-01
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