BTS550P Datasheet, PDF (1/15 Pages) Siemens Semiconductor Group – Smart Highside High Current Power Switch (Overload protection Current limitation Short circuit protection Overtemperature protection)

PROFET® Data Sheet BTS550P
Smart Highside High Current Power Switch
Reversave
• _{Reverse battery protection by self turn on of}
power MOSFET
Features
• _{Overload protection}
• _{Current limitation}
• _{Short circuit protection}
• _{Overtemperature protection}
• _{Overvoltage protection (including load dump)}
• _{Clamp of negative voltage at output}
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
V_bb(AZ)
V_ON(CL)
Vbb(on)
RON
IL(ISO)
IL(SC)
IL : I_IS
62 V
44 V
5.0 ... 34 V
3.6 mΩ
115 A
220 A
21000
• _{Fast deenergizing of inductive loads} 1)
• _{Low ohmic inverse current operation}
• _{Diagnostic feedback with load current sense}
• _{Open load detection via current sense}
TO-218AB/5
• _{Loss of Vbb protection}2)
• _{Electrostatic discharge (ESD) protection}
Application
5
• _{Power switch with current sense diagnostic}
feedback for 12 V and 24 V DC grounded loads
• _{Most suitable for loads with high inrush current}
like lamps and motors; all types of resistive and
1
Straight leads
inductive loads
• _{Replaces electromechanical relays, fuses and discrete circuits}
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS^ chip on chip technology. Providing embedded protective functions.
Voltage
source
Voltage
sensor
2 _IN
ESD
I _IN
Logic
V_IN
V_IS
Logic GND
I _IS
IS
4
RIS
R _bb
Overvoltage Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
Limit for
unclamped
ind. loads
Output
Voltage
detection
Current
Sense
3 & Tab
+ Vbb
OUT ^{1, 5}
I_L
Load
Temperature
sensor
PROFET^
Load GND
1_{) With additional external diode.}
2) _{Additional external diode required for energized inductive loads (see page 9).}
Infineon Technologies AG
1 of 15
2003-Oct-01