BTS3410G_07 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Smart Low Side Power Switch

Smart Low Side Power Switch
HITFET BTS 3410G
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Product Summary
Drain source voltage V_DS
42 V
On-state resistance R_DS(on) 200 mW
Nominal load current I_D(Nom) 1.3 A
Clamping energy
E_AS
150 mJ
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS^Ò technology. Fully protected by embedded
protection functions.
Vbb
M
HITFET ^â
In1
Pin 2
Logic
Channel 1
Drain1
Pin 7and 8
Source1
Pin 1
In2
Pin 4
Logic
Channel 2
Drain2
Pin 5and 6
Source2
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Datasheet
1
Rev. 1.3, 2007-11-06