BTS3207N_08 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Smart Low Side Power Switch

Smart Low Side Power Switch
HITFET BTS 3207N
Features
Product Summary
· Logic Level Input
Drain source voltage
· Input Protection (ESD)
· Thermal shutdown with auto restart
• Green product (RoHS compliant)
On-state resistance
Nominal load current
Clamping energy
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
V_DS
42 V
R_DS(on) 500 mW
I_D(Nom) 0.64 A
E_AS
150 mJ
4
3
2
1
VPS05163
General Description
N channel vertical power FET in Smart SIPMOS^Ò technology. Fully protected by embedded
protection functions.
Vbb
HITFET ^â
In
Pin 1
Gate-Driving
Unit
Current
Limitation
Overvoltage-
Protection
M
Drain
Pin 2 and 4 (TAB)
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Source
Pin 3
Datasheet
1
Rev. 1.2, 2008-04-14