BTS3142D Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Smart Lowside Power Switch

HITFET ^® BTS 3142 D
Smart Lowside Power Switch
Features
•Logic Level Input
•Input Protection (ESD)
•Thermal shutdown
•Overload protection
•Short circuit protection
•Overvoltage protection
•Current limitation
•Analog driving possible
Product Summary
Drain source voltage V_DS
42 V
On-state resistance R_DS(on) 28 mΩ
Nominal load current I_D(Nom) 4.6 A
Clamping energy
E_AS
3.5 J
Application
•All kinds of resistive, inductive and capacitive loads in switching
or linear applications
•µC compatible power switch for 12 V DC applications
•Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS ^® technology. Fully protected by embedded
protection functions.
Vbb
HITFET ^®
In
Pin 1
Gate-Driving
Unit
Current
Limitation
Overvoltage-
Protection
M
Drain
Pin 2 and 4 (TAB)
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Source
Pin 3
Page 1
2002-09-04