BTS3134N_08 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Smart Low Side Power Switch

Smart Low Side Power Switch
HITFET BTS 3134N
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown
• Green product (RoHS compliant)
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Product Summary
Drain source voltage V_DS
42 V

On-state resistance R_DS(on) 50 m
Nominal load current I_D(Nom) 3 A
Clamping energy
E_AS
500 mJ
4
3
2
1
VPS05163
Application
 All kinds of resistive, inductive and capacitive loads in switching
or linear applications
 µC compatible power switch for 12 V DC applications
 Replaces electromechanical relays and discrete circuits
General Description
 _{N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded}
protection functions.
Vbb
HITFET
In
Pin 1
Gate-Driving
Unit
Current
Limitation
Overvoltage-
Protection
M
Drain
Pin 2 and 4 (TAB)
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Source
Pin 3
Datasheet
1
Rev. 1.3, 2008-04-14