BTS3134D Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Smart Lowside Power Switch

HITFET^= BTS 3134 D
Smart Lowside Power Switch
Features
 Logic Level Input
 Input Protection (ESD)
 Thermal shutdown
 Overload protection
 Short circuit protection
 Overvoltage protection
 Current limitation
 Analog driving possible
Product Summary
Drain source voltage V_DS
42 V

On-state resistance R_DS(on) 50 m
Nominal load current I_D(Nom) 3.5 A
Clamping energy
E_AS
3J
Application
 All kinds of resistive, inductive and capacitive loads in switching
or linear applications
 µC compatible power switch for 12 V DC applications
 Replaces electromechanical relays and discrete circuits
General Description
 _{N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded}
protection functions.
Vbb
HITFET
In
Pin 1
Gate-Driving
Unit
Current
Limitation
Overvoltage-
Protection
M
Drain
Pin 2 and 4 (TAB)
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Source
Pin 3
Page 1
2004-02-02