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BTS3118D Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Smart Lowside Power Switch | |||
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HITFETï= BTS 3118 D
Smart Lowside Power Switch
Features
Logic Level Input
Input Protection (ESD)
Thermal shutdown
Overload protection
Short circuit protection
Overvoltage protection
Current limitation
Analog driving possible
Product Summary
Drain source voltage VDS
42 V
On-state resistance RDS(on) 100 m
Nominal load current ID(Nom) 2.4 A
Clamping energy
EAS
2J
Application
All kinds of resistive, inductive and capacitive loads in switching
or linear applications
µC compatible power switch for 12 V DC applications
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS technology. Fully protected by embedded
protection functions.
Vbb
HITFET
In
Pin 1
Gate-Driving
Unit
Current
Limitation
Overvoltage-
Protection
M
Drain
Pin 2 and 4 (TAB)
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Source
Pin 3
Page 1
2002-09-04
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