BTS3035TF Datasheet, PDF (1/39 Pages) Infineon Technologies AG – Smart Low-Side Power Switch

HITFET - BTS3035TF
Smart Low-Side Power Switch
1
Overview
Basic Features
• Single channel device
• Very low output leakage current in OFF state
• Electrostatic discharge protection (ESD)
• Embedded protection functions (see below)
• Green Product (RoHS compliant)
• AEC Qualified
Applications
• Suitable for resistive, inductive and capacitive loads
• Replaces electromechanical relays, fuses and discrete circuits
Description
The BTS3035TF is a 35 mΩ single channel Smart Low-Side Power Switch within a PG-TO252-3 package
providing embedded protective functions. The power transistor is built by an N-channel vertical power
MOSFET.
The device is monolithically integrated. The BTS3035TF is automotive qualified and is optimized for 12 V
automotive applications.
Type
BTS3035TF
Package
PG-TO252-3
Marking
S3035TF
Table 1 Product Summary
Operating voltage range
Maximum load voltage
Maximum input voltage
Maximum On-State resistance at T_J = 150°C, V_IN = 5 V
Nominal load current
Minimum current limitation
Maximum OFF state load current at T_J ≤ 85°C
V_OUT
V_BAT(LD)
V_IN
R_DS(ON)
I_L(NOM)
I_L(LIM)
I_{L(OFF)_85}
0 .. 31 V
40 V
5.5 V
70 mΩ
5A
20 A
0.6 µA
Datasheet
1
www.infineon.com/hitfet
Rev. 1.0
2016-06-01