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BTS149 Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Smart Lowside Power Switch | |||
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HITFETï=BTS 149
Smart Lowside Power Switch
Features
⢠Logic Level Input
⢠Input Protection (ESD)
â¢=Thermal shutdown with latch
⢠Overload protection
⢠Short circuit protection
⢠Overvoltage protection
⢠Current limitation
⢠Status feedback with external input resistor
⢠Analog driving possible
Product Summary
Drain source voltage
On-state resistance
Current limit
Nominal load current
Clamping energy
VDS
RDS(on)
I D(lim)
I D(ISO)
EAS
60 V
18 mâ¦
30 A
19 A
6000 mJ
Application
⢠All kinds of resistive, inductive and capacitive loads in switching or
linear applications
⢠µC compatible power switch for 12 V and 24 V DC applications
⢠Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOSï chip on chip tech-
nology. Fully protected by embedded protected functions.
Vbb
+
LOAD
1
IN
dv/dt
lim itation
C u rre n t
lim itation
O v e rvo lta g e
protection
D ra in
2
ESD
O v e rlo a d
p ro te c tio n
O ve r-
tem perature
p ro te c tio n
SShhoorrtt cciirrccuuiitt
pprrootteeccttiioonn
Source
3
H IT F E T
Page 1
M
2004-02-02
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