BTS118D Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Smart Lowside Power Switch

HITFET^Ò II.Generation BTS 118 D
Smart Lowside Power Switch
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with
auto restart
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Product Summary
Drain source voltage V_DS
42 V
On-state resistance R_DS(on) 100 mW
Nominal load current I_D(Nom) 2.4 A
Clamping energy
E_AS
2J
P-TO252-3-11
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart SIPMOS^Ò technology. Fully protected by embedded
protection functions.
Vbb
HITFET ^â
In
Pin 1
Gate-Driving
Unit
Current
Limitation
Overvoltage-
Protection
M
Drain
Pin 2 and 4 (TAB)
ESD
Overload
Protection
Over-
temperature
Protection
Short circuit
Protection
Source
Pin 3
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05