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BTS100 Datasheet, PDF (1/10 Pages) Siemens Semiconductor Group – Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic) | |||
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Smart Highside Power Switch
Features
q P channel
q Enhancement mode
q Temperature sensor with thyristor characteristic
q The drain pin is electrically shorted to the tab
TEMPFET® BTS 100
Pin
1
2
3
G
D
S
Type
BTS 100
VDS
â 50 V
ID
â8A
RDS(on)
0.3 â¦
Package
TO-220AB
Ordering Code
C67078-A5007-A2
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage, RGS = 20 kâ¦
Gate-source voltage
Continuous drain current, TC = 30 °C
ISO drain current
TC = 85 ËC, VGS = 10 V, VDS = 0.5 V
Pulsed drain current, TC = 25 °C
Short circuit current, Tj = â 55 ... + 150 °C
Short circuit dissipation, Tj = â 55 ... + 150 °C
Power dissipation
Operating and storage temperature range
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Thermal resistance
Chip-case
Chip-ambient
Symbol
VDS
VDGR
VGS
ID
ID-ISO
ID puls
ISC
PSCmax
Ptot
Tj, Tstg
â
â
Rth JC
Rth JA
Values
â 50
â 50
± 20
â 8.0
â 1.5
â 32
â 25
500
40
â 55 ... + 150
E
55/150/56
⤠3.1
⤠75
Unit
V
A
W
°C
â
K/W
1
04.96
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