BSZ160N10NS3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

OptiMOS^TM3 Power-Transistor
Features
• Ideal for high frequency switching
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, normal level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
BSZ160N10NS3 G
Product Summary
V _DS
R _DS(on),max
I_D
100 V
16 mΩ
40 A
PG-TSDSON-8
Type
BSZ160N10NS3 G
Package
Marking
PG-TSDSON-8 160N10N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
Value
Unit
40
A
28
V _GS=10 V, T _A=25 °C,
R _thJA=60 K/W²⁾
8
Pulsed drain current³⁾
I _D,pulse T _C=25 °C
160
Avalanche energy, single pulse⁴⁾
E _AS
I _D=20 A, R _GS=25 Ω
80
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev. 1.2
page 1
2009-11-12