BSZ100N06LS3G Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS3 Power-Transistor

OptiMOS^TM3 Power-Transistor
Features
• Ideal for high frequency switching and sync. rec.
• Optimized technology for DC/DC converters
• Excellent gate charge x R _DS(on) product (FOM)
• N-channel, logic level
• 100% avalanche tested
• Pb-free plating; RoHS compliant
• Qualified according to JEDEC¹⁾ for target applications
• Halogen-free according to IEC61249-2-21
Type
BSZ100N06LS3 G
Product Summary
V _DS
R _DS(on),max
I_D
BSZ100N06LS3 G
60 V
10 mΩ
20 A
Package
PG-TSDSON-8
Marking
100N06L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C²⁾
20
A
V _GS=10 V, T _C=100 °C
20
V _GS=4.5 V, T _C=25 °C
20
V _GS=4.5 V,
T _C=100 °C
20
V _GS=10 V, T _A=25 °C,
R _thJA=60 K/W³⁾
11
Pulsed drain current⁴⁾
I _D,pulse T _C=25 °C
80
Avalanche energy, single pulse⁵⁾
E _AS
I _D=20 A, R _GS=25 Ω
55
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{Current is limited by bondwire; with an R thJC=2.5 K/W the chip is able to carry 55 A.}
3) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
4) _{See figure 3 for more detailed information}
5) _{See figure 13 for more detailed information}
Rev. 2.3
page 1
2009-11-11