BSZ100N03LSG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-MOSFET

OptiMOS™3 Power-MOSFET
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel; Logic level
• Excellent gate charge x R _DS(on) product (FOM)
BSZ100N03LS G
Product Summary
V _DS
R _DS(on),max
I_D
30 V
10 mΩ
40 A
PG-TSDSON-8
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
BSZ100N03LS G
Package
Marking
PG-TSDSON-8 100N03L
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
Pulsed drain current³⁾
Avalanche current, single pulse⁴⁾
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
1) _{J-STD20 and JESD22}
V _GS=4.5 V, T _C=25 °C
V _GS=4.5 V,
T _C=100 °C
V _GS=10 V, T _A=25 °C,
R _thJA=60 K/W²⁾
I _D,pulse
I _AS
E _AS
dv /dt
V _GS
T _C=25 °C
T _C=25 °C
I _D=20 A, R _GS=25 Ω
I _D=40 A, V _DS=24 V,
di /dt =200 A/µs,
T _j,max=150 °C
Rev. 2.0
page 1
Value
40
28
36
23
12
160
20
15
6
±20
Unit
A
mJ
kV/µs
V
2010-03-19