BSZ096N10LS5 Datasheet, PDF (1/11 Pages) Infineon Technologies AG – OptiMOSTM5 Power-Transistor, 100 V

BSZ096N10LS5
MOSFET
OptiMOS^TM5Power-Transistor,100V
Features
•Idealforhighfrequencyswitching
•OptimizedtechnologyforDC/DCconverters
•ExcellentgatechargexRDS(on)product(FOM)
•N-channel,Logiclevel
•100%avalanchetested
•Pb-freeplating;RoHScompliant
•QualifiedaccordingtoJEDEC¹⁾fortargetapplications
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
9.6
mΩ
ID
40
A
QOSS
30
nC
QG(0VB4.5V)
12
nC
TSDSON-8FL
(enlarged source interconnection)
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
BSZ096N10LS5
Package
PG-TSDSON-8 FL
Marking
096N10L
RelatedLinks
-
1) _{J-STD20 and JESD22}
Final Data Sheet
1
Rev.2.1,2016-04-21