BSZ086P03NS3EG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS P3 Power-Transistor

OptiMOS^TM P3 Power-Transistor
Features
• single P-Channel in S3O8
• Qualified according JEDEC¹⁾ for target applications
• 150 °C operating temperature
• V _GS=25 V, specially suited for notebook applications
• Pb-free; RoHS compliant
• ESD protected
• applications: battery management, load switching
• Halogen-free according to IEC61249-2-21
BSZ086P03NS3E G
Product Summary
V _DS
R _DS(on),max
I_D
-30 V
8.6 mΩ
-40 A
PG-TSDSON-8
Type
Package
Marking
BSZ086P03NS3E G PG-TSDSON-8 086P3N
Lead free
Yes
Halogen free
Yes
Packing
non-dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=70 °C
I _D,pulse
T _A=25 °C²⁾
T _C=25 °C³⁾
E _AS
I _D=-20 A, R _GS=25 Ω
V _GS
P _tot
T _A=25 °C
T _A=25 °C²⁾
T _j, T _stg
ESD class
JESD22-A114 HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
1) _{J-STD20 and JESD22}
Value
Unit
-40
A
-40
-13.5
-160
105
mJ
±25
V
69
W
2.1
-55 … 150
°C
3 (>= 4 kV)
260
°C
55/150/56
Rev. 2.02
page 1
2009-11-16