BSZ068N06NS Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOSTM Power-Transistor

Type
OptiMOS^TM Power-Transistor
Features
• Optimized for high performance SMPS, e.g. sync. rec.
• 100% avalanche tested
• Superior thermal resistance
• N-channel
• Qualified according to JEDEC¹⁾ for target applications
• Pb-free lead plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSZ068N06NS
Product Summary
V_DS
R_DS(on),max
I_D
Q_OSS
Q_G(0V..10V)
60 V
6.8 mW
40 A
19 ^nC
17 ^nC
PG-TSDSON-8
(Fused Leads)
Type
Package
Marking
BSZ068N06NS PG-TSDSON-8 (Fused Leads)
068N06N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
V _GS=10 V, T _C=25 °C
40
A
V _GS=10 V, T _C=100 °C
38
V _GS=10 V, T _C=25 °C,
R _thJA =60K/W²⁾
13
Pulsed drain current³⁾
Avalanche energy, single pulse⁴⁾
I _D,pulse
E _AS
T _C=25 °C
I _D=20 A, R _GS=25 W
160
43
mJ
Gate source voltage
V _GS
±20
V
1) _{J-STD20 and JESD22}
2) _{Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical in still air.
3) _{See figure 3 for more detailed information}
4) _{See figure 13 for more detailed information}
Rev.2.0
page 1
2013-10-17