BSZ042N04NSG Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™3 Power-Transistor

OptiMOS™3 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC¹⁾ for target applications
• N-channel; Normal level
• Excellent gate charge x R _DS(on) product (FOM)
• Very low on-resistance R _DS(on)
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
BSZ042N04NS G
Product Summary
V _DS
R _DS(on),max
I_D
40 V
4.2 mΩ
40 A
PG-TSDSON-8
Type
BSZ042N04NS G
Package
Marking
PG-TSDSON-8 042N04N
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current³⁾
Avalanche current, single pulse⁴⁾
Avalanche energy, single pulse
Gate source voltage
1) _{J-STD20 and JESD22}
I_D
V _GS=10 V, T _C=25 °C
V _GS=10 V, T _C=100 °C
I _D,pulse
I _AS
E _AS
V _GS
T _C=25 °C
T _C=25 °C
I _D=20 A, R _GS=25 Ω
Value
Unit
40
A
40
160
20
150
mJ
±20
V
Rev. 1.3
page 1
2009-11-05