BSV236SP_06 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – OptiMOS-P Small-Signal-Transistor

BSV 236SP
OptiMOS^-P Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated
Product Summary
V_DS
-20 V
R_DS(on) 175 mΩ
I_D
-1.5 A
PG-SOT-363
4
5
6
3
2
1
VPS05604
Type
BSV 236SP
Package
Tape and Reel inf Marking
PG-SOT-363 L6327:3000pcs/r. X2s
Gate
pin 3
Drain
pin 1,2,
5,6
Source
pin 4
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Avalanche energy, single pulse
I_D=-1.5 A , V_DD=-10V, R_GS=25Ω
Reverse diode dv/dt
I_D
I_{D puls}
E_AS
dv/dt
I_S=-1.5A, V_DS=-16V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-1.5
-1.2
-6
9.5
-6
±12
0.56
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.3
Page 1
2006-12-04