BSS84PW Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

BSS84PW
SIPMOS^® Small-Signal-Transistor
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· Logic Level
· dv/dt rated
Product Summary
Drain source voltage
Drain-source on-state resistance
Continuous drain current
V_DS
R_DS(on)
I_D
-60 V
8W
-0.15 A
3
Type
BSS84PW
Package Tape and Reel Marking Pin 1
PG-SOT-323 L6327:3000pcs/r. YBs
G
2
1
VSO05561
PIN 2 PIN 3
S
D
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
T_A = 25 °C
Pulsed drain current
T_A = 25 °C
Avalanche energy, single pulse
W I_D = -0.15 A , V_DD = -25 V, R_GS = 25
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
I_D
I_{D puls}
E_AS
E_AR
dv/dt
I_S = -0.15 A, V_DS = -48 V, di/dt = 200 A/µs,
T_jmax = 150 °C
Gate source voltage
Power dissipation
T_A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
Value
-0.15
-0.6
2.61
0.03
6
±20
0.3
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 1.3
Page 1
2006-12-05