BSS83P_06 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

BSS 83 P
SIPMOS^® Small-Signal-Transistor
Features
· P-Channel
· Enhancement mode
· Avalanche rated
· Logic Level
· dv/dt rated
Product Summary
Drain source voltage
V_DS
-60 V
Drain-source on-state resistance R_DS(on) 2
W
Continuous drain current
I_D
-0.33 A
3
Type
BSS 83 P
Package Tape and Reel Marking Pin 1
PG-SOT-23 L6327: 3000pcs/r. YAs
G
2
1 _VPS05161
PIN 2 PIN 3
S
D
Maximum Ratings,at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A = 25 °C
T_A = 70 °C
Pulsed drain current
T_A = 25 °C
Avalanche energy, single pulse
W I_D = -0.33 A , V_DD = -25 V, R_GS = 25
I_{D puls}
E_AS
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S = -0.33 A, V_DS = -48 V, di/dt = 200 A/µs,
T_jmax = 150 °C
Gate source voltage
V_GS
Power dissipation
P_tot
T_A = 25 °C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
-0.33
-0.27
-1.32
9.5
0.036
6
±20
0.36
-55...+150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev. 1.2
Page 1
2006-12-05