BSS806N Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™2 Small-Signal-Transistor

OptiMOS^™2 Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Ultra Logic level (1.8V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
BSS806N
Product Summary
V _DS
R _DS(on),max
I_D
V _GS=2.5 V
V _GS=1.8 V
20 V
57 mΩ
82
2.3 A
PG-SOT23
3
1
2
Type
BSS806N
Package
SOT23
Tape and Reel Information
L6327: 3000 pcs/ reel
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
Marking
YEs
Avalanche energy, single pulse
E _AS
I _D=2.3 A, R _GS=25 Ω
Reverse diode dv /dt
Gate source voltage
Power dissipation¹⁾
Operating and storage temperature
dv /dt
I _D=2.3 A, V _DS=16 V,
di /dt =200 A/µs,
T _j,max=150 °C
V _GS
P _tot
T _A=25 °C
T _j, T _stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
Lead Free
Yes
Packing
Non dry
Value
2.3
1.9
9.3
10.8
6
±8
0.5
-55 ... 150
0(<250V)
260 °C
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev 2.2
page 1
2010-03-25