BSS225 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS® Small-Signal-Transistor

Type
SIPMOS^® Small-Signal-Transistor
Feature
• n-channel
• enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Product Summary
V _DS ¹⁾
R _DS(on),max
I_D
BSS225
600 V
45
Ω
0.09 A
PG-SOT89
Type
BSS225
Package Ordering Code Tape and Reel Information
PG-SOT89 Q67042-S4266 E6327: 3000PCS/reel
Marking
KD
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
I_D
I _D,pulse
dv /dt
V _GS
T _A=25 °C
T _A=70 °C
T _A=25 °C
I _D=0.09 A,
V _DS=480 V,
di /dt =200 A/µs,
T _j,max=150 °C
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
0.09
0.073
0.36
6
±20
Class 1a
1.00
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.21
page 1
2005-02-25