BSS169_07 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V _GS(th) indicator on reel
• Pb-free lead-plating; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I _DSS,min
BSS169
100 V
12 Ω
0.09 A
PG-SOT-23
Type
BSS169
BSS169
Package
PG-SOT-23
PG-SOT-23
Pb-free
Yes
Yes
Tape and Reel Information
L6327: 3000 pcs/reel
L6906: 3000 pcs/reel
sorted in V _GS(th) bands¹⁾
Maximum ratings, at T _j=25 °C, unless otherwise specified
Marking
SFs
SFs
Parameter
Symbol Conditions
Value
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
0.17
0.14
0.68
Reverse diode dv /dt
I _D=0.17 A, V _DS=80 V,
dv /dt di /dt =200 A/µs,
6
T _j,max=150 °C
Gate source voltage
V _GS
ESD sensitivity (HBM) as per
MIL-STD 883
±20
Class 1
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
0.36
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
1) _{see table on next page and diagram 11}
Rev. 1.3
page 1
2007-02-07