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BSS159N_06 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with V GS(th) indicator on reel
• Pb-free lead-plating; RoHS compliant
Product Summary
V DS
R DS(on),max
I DSS,min
BSS159N
60 V
8Ω
0.13 A
SOT-23
Type
BSS159
BSS159
Package Pb-free Tape and Reel Information
PG-SOT-23 Yes
L6327: 3000 pcs/reel
PG-SOT-23 Yes
L6906: 3000 pcs/reel sorted in V GS(th) bands1)
Maximum ratings, at T j=25 °C, unless otherwise specified
Marking
SGs
SGs
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
0.23
A
0.18
0.92
Reverse diode dv /dt
dv /dt
I D=0.23 A, V DS=60 V,
di /dt =200 A/µs,
T j,max=150 °C
6
kV/µs
Gate source voltage
V GS
ESD sensitivity (HBM) as per
MIL-STD 883
±20
V
Class 0
Power dissipation
P tot
T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
0.36
W
-55 ... 150
°C
55/150/56
1) see table on next page and diagram 11
Rev. 1.32
page 1
2006-12-11