BSS138W Datasheet, PDF (1/9 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SIPMOS^® Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
Product Summary
V _DS
R _DS(on),max
I_D
BSS138W
60 V
3.5 Ω
0.28 A
SOT-323
Type
BSS138W
BSS138W
Package
SOT-323
SOT-323
Ordering Code Tape and Reel Information
Q67042-S4187 E6327: 3000 pcs/reel
Q67042-S4191 E6433: 10000 pcs/reel
Marking
SWs
SWs
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
dv /dt
I _D=0.28 A, V _DS=48 V,
di /dt =200 A/µs,
T _j,max=150 °C
V _GS
Power dissipation
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
IEC climatic category; DIN IEC 68-1
Value
0.28
0.22
1.12
6
±20
Class 1
0.50
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 1.1
page 1
2004-04-16