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| BSS131H6327 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS® Small-Signal-Transistor | |||
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Type
SIPMOS® Small-Signal-Transistor
Feature
⢠N-Channel
⢠Enhancement mode
⢠Logic level
⢠dv /dt rated
⢠Pb-free lead-plating; RoHS compliant
⢠Qualified according to AEC Q101
⢠Halogen-free according to IEC61249-2-21
Product Summary
VDS
RDS(on),max
ID
BSS131
240 V
14
Ω
0.1 A
PG-SOT-23
Type
BSS131
Package Pb-free
PG-SOT23 Yes
Tape and Reel Information
H6327
Marking
SRs
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD Class
Symbol Conditions
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
dv /dt
I D=0.1 A, V DS=192 V,
di /dt =200 A/µs,
T j,max=150 °C
V GS
JESD22-A114-HBM
Value
0.11
0.09
0.4
6
±20
Class 0
Power dissipation
P tot
T A=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
0.36
-55 ... 150
55/150/56
Unit
A
kV/µs
V
W
°C
Rev. 2.6
page 1
2012-03-29
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