BSS123N Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™ Small-Signal-Transistor

OptiMOS^™ Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant, Halogen free
BSS123N
Product Summary
V_DS
R_DS(on),max
I_D
V_GS=10 V
V_GS=4.5 V
100 V
6W
10
0.19 A
PG-SOT23
3
1
2
Type
BSS123N
Package
SOT23
Tape and Reel Information
H6327: 3000 pcs/ reel
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
Marking
SAs
Halogon Free
Yes
Packing
Non dry
Value
Unit
0.19
A
0.15
0.77
Avalanche energy, single pulse
E _AS
I _D=0.19 A, R _GS=25 W
2.0
mJ
Reverse diode dv /dt
dv /dt
I _D=0.19 A, V _DS=80 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
Power dissipation¹⁾
Operating and storage temperature
ESD Class
V _GS
P _tot
T _A=25 °C
T _j, T _stg
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
6
±20
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.3
page 1
2012-11-21