BSS123 Datasheet, PDF (1/8 Pages) NXP Semiconductors – N-channel enhancement mode vertical D-MOS transistor

Rev. 1.0
SIPMOS^ Small-Signal-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
BSS123
Product Summary
V_DS
R_DS(on)
I_D
100 V
6Ω
0.17 A
Gate
pin1
Drain
pin 3
SOT23
3
Source
pin 2
2
1 _VPS05161
Type
BSS123
BSS123
Package
SOT23
SOT23
Ordering Code
Q62702-S512
Q67000-S245
Tape and Reel Information
E6327: 3000 pcs/reel
E6433: 10000 pcs/reel
Marking
SAs
SAs
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
I_{D puls}
T_A=25°C
Reverse diode dv/dt
dv/dt
I_S=0.17A, V_DS=80V, di/dt=200A/µs, T_jmax=150°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
V_GS
Power dissipation
P_tot
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
T_j , T_stg
Value
0.17
0.14
0.68
6
±20
Class 1
0.36
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2002-12-10