BSR316P Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode / Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Footprint compatible to SOT23
Product Summary
V _DS
R _DS(on),max
I_D
BSR316P
-100 V
1.8 Ω
-0.36 A
PG-SC59
Type
BSR316P
Package
PG-SC59
Tape and Reel Information
L6327 = 3000 pcs. / reel
Maximum ratings, at T _j=25 °C, unless otherwise specified
Marking Lead free
LC
Yes
Packing
Non dry
Parameter
Continuous drain current
Pulsed drain current
Symbol Conditions
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
Value
Unit
steady state
-0.36
A
-0.29
-1.44
Avalanche energy, single pulse
E _AS
I _D=-0.36 A, R _GS=25 Ω
25
mJ
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
V _GS
P _tot
T _C=25 °C
T _j, T _stg
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
±20
V
0.5
W
-55 ... 150
°C
1A (250V to 500V)
260 °C
55/150/56
Rev 1.05
page 1
2009-02-16