BSP613P_16 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOSÒ Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter
• Qualified according to AEC Q101
• Halogen­free according to IE C 61249­2­21
BSP613P
Product Summary
V_DS
-60 V
R_DS(on) 0.13 Ω
I_D
-2.9 A
PG-SOT223
Gate
pin1
Drain
pin 2,4
Source
pin 3
Type
BSP613P
Package
PG-SOT223
Tape and reel Packaging
H6327: 1000pcs/r. Non Dry
Marking
B S P 613 P
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Avalanche energy, single pulse
I_D=2.9 A , V_DD=-25V, R_GS=25Ω
I_{D puls}
E_AS
Avalanche energy, periodic limited by T_jmax
Reverse diode dv/dt
E_AR
dv/dt
I_S=2.9A, V_DS=-48V, di/dt=-200A/µs, T_jmax=150°C
Gate source voltage
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
V_GS
P_tot
T_j , T_stg
ESD Class
JESD22-A114-HBM
Value
-2.9
-2.3
-11.6
150
0.18
6
±20
1.8
-55... +150
55/150/56
Class 1c
Unit
A
mJ
kV/µs
V
W
°C
Rev.2.8
Page 1
2016-05-30