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BSP613P_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor
SIPMOS® Small-Signal-Transistor
Feature
• P-Channel
• Enhancement mode
• Avalanche rated
• dv/dt rated
• Ideal for fast switching buck converter
BSP613P
Product Summary
VDS
-60 V
RDS(on) 0.13 Ω
ID
-2.9 A
PG-SOT-223
Type
BSP613P
Package
PG-SOT-223
Tape and reel
L6327: 1000pcs/r.
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
TA=25°C
TA=70°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=2.9 A , VDD=-25V, RGS=25Ω
Avalanche energy, periodic limited by Tjmax
Reverse diode dv/dt
ID puls
EAS
EAR
dv/dt
IS=2.9A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C
Gate source voltage
Power dissipation
TA=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
VGS
Ptot
Tj , Tstg
Gate
pin1
Drain
pin 2,4
Source
pin 3
Value
-2.9
-2.3
-11.6
150
0.18
6
±20
1.8
-55... +150
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev.2.4
Page 1
2007-02-08