BSP612P Datasheet, PDF (1/9 Pages) Infineon Technologies AG – Enhancement mode

BSP612P
OptiMOS™-P Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
Product Summary
V_DS
R_DS(on),max
I_D
V_GS=10 V
V_GS=4.5 V
-60
V
120
mW
170
-3
A
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
PG-SOT-223
• Halogen-free according to AEC61249-2-21
Type
BSS612P
Package
SOT223
Tape and Reel Information
H6327: 1000 pcs/ reel
Maximum ratings, at T _j=25 °C, unless otherwise specified
Marking Halogen Free
BSP612P ^Yes
Packing
Non dry
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I_D
T _A=25 °C
T _A=70 °C
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
I _D,pulse
E _AS
dv /dt
T _A=25 °C
I _D =-3 A,
V _DD =-25V,
R _GS = 25 Ω
I _D=-3 A, V _DS=-48 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
V _GS
Power dissipation¹⁾
P _tot
T _A=25 °C
Operating and storage temperature T _j, T _stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
-3.0
-2.44
-12
150
6
±20
1.8
-55 ... 150
1C
260 °C
55/150/56
A
mJ
kV/µs
V
W
°C
V
°C
°C
Rev 2.0
page 1
2015-10-07