BSP50_07 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – NPN Silicon Darlington Transistors

NPN Silicon Darlington Transistors
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BSP60 - BSP52 (PNP)
• Pb-free (RoHS compliant) package¹⁾
• Qualified according AEC Q101
BSP50-BSP52
4
3
2
1
Type
BSP50
BSP51
BSP52
Marking
Pin Configuration
BSP50 1=B 2=C 3=E 4=C -
-
BSP51 1=B 2=C 3=E 4=C -
-
BSP52 1=B 2=C 3=E 4=C -
-
Package
SOT223
SOT223
SOT223
Maximum Ratings
Parameter
Collector-emitter voltage
BSP50
BSP51
BSP52
Symbol
V_CEO
Collector-base voltage
BSP50
BSP51
BSP52
V_CBO
Emitter-base voltage
Collector current
Peak collector current
Base current
Total power dissipation-
T_S ≤ 124 °C
Junction temperature
Storage temperature
V_EBO
I_C
I_CM
I_B
P_tot
T_j
T_stg
1_{Pb-containing package may be available upon special request}
Value
Unit
V
45
60
80
60
80
90
5
1
A
2
100
mA
1.5
W
150
°C
-65 ... 150
1
2007-03-30