BSP373N Datasheet, PDF (1/9 Pages) Infineon Technologies AG – OptiMOS™ Small-Signal-Transistor

OptiMOS^™ Small-Signal-Transistor
Features
• N-channel
• Enhancement mode
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V_DS
R_DS(on),max
I_D
BSP373N
100 V
0.24 W
1.8 A
PG-SOT223
Type
BSP373N
Package
SOT223
Tape and Reel Information
H6327: 1000 pcs/ reel
Marking
BSP373N
Halogen-Free
Yes
Packing
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=70 °C
T _A=25 °C
1.8
A
1.5
7.3
Avalanche energy, single pulse
E _AS
I _D=1.8 A, R _GS=25 W
33
mJ
Reverse diode dv /dt
dv /dt
I _D=1.8 A, V _DS=80 V,
di /dt =200 A/µs,
T _j,max=150 °C
Gate source voltage
Power dissipation¹⁾
Operating and storage temperature
V _GS
P _tot
T _A=25 °C
T _j, T _stg
ESD Class
JESD22-A114 -HBM
Soldering Temperature
IEC climatic category; DIN IEC 68-1
6
±20
1.8
-55 ... 150
0 (<250V)
260 °C
55/150/56
kV/µs
V
W
°C
Rev 2.0
page 1
2013-04-04