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| BSP372_08 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal Transistor | |||
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BSP372
SIPMOS ® Small-Signal Transistor
⢠N channel
⢠Enhancement mode
⢠Logic Level
⢠Avalanche rated
⢠VGS(th) = 0.8 ...2.0 V
⢠Pb-free lead plating; RoHS compliant
⢠Qualified according to AEC Q101
Pin 1
G
Pin 2
D
Pin 3
S
Pin 4
D
Type
BSP372
Type
BSP372
VDS
100 V
ID
1.7 A
Package
PG-SOT223
RDS(on)
0.31 â¦
Tape and Reel Information Marking
L6327: 1000 pcs/reel
BSP372
Packaging
Non dry
Maximum Ratings
Parameter
Continuous drain current
TA = 28 ËC
DC drain current, pulsed
TA = 25 ËC
Avalanche energy, single pulse
ID = 1.7 A, VDD = 25 V, RGS = 25 â¦
L = 23.3 mH, Tj = 25 ËC
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
TA = 25 ËC
Symbol
ID
IDpuls
EAS
VGS
Vgs
Ptot
Values
Unit
A
1.7
6.8
mJ
45
± 14
V
± 20
W
1.8
Rev 2.0
1
2008-03-31
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