BSP324_09 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Rev. 2.1
SIPMOS^ Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
• Pb-free lead plating; RoHS compliant
x Qualified according to AEC Q101
BSP324
Product Summary
V_DS
400 V
R_DS(on)
25 Ω
I_D
0.17 A
SOT-223
Type
BSP324
Package
PG-SOT223
Pb-free Packaging Tape and Reel Information Marking
Yes Non dry
L6327: 1000 pcs/reel
BSP324
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
I_{D puls}
Reverse diode dv/dt
dv/dt
I_S=0.17A, V_DS=320V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
ESD Class (JESD22-A114-HBM)
V_GS
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P_tot
T_j , T_stg
Value
Unit
A
0.17
0.14
0.68
6
kV/µs
±20
V
1A (>250V, <500V)
1.8
W
-55... +150
°C
55/150/56
Page 1
2009-08-18