BSP324 Datasheet, PDF (1/8 Pages) Siemens Semiconductor Group – SIPMOS Small-Signal Transistor (N channel Enhancement mode)

SIPMOS^® Power-Transistor
Feature
• N-Channel
• Enhancement mode
• Logic Level
• dv/dt rated
Rev. 1.0
BSP324
Product Summary
V_DS
400 V
R_DS(on)
25 Ω
I_D
0.17 A
SOT-223
Type
BSP324
Package
SOT-223
Ordering Code Tape and Reel Information Marking
Q67000-S215 E6327: 1000 pcs/reel
BSP324
Maximum Ratings, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
I_D
T_A=25°C
T_A=70°C
Pulsed drain current
T_A=25°C
Reverse diode dv/dt
I_{D puls}
dv/dt
I_S=0.17A, V_DS=320V, di/dt=200A/µs, T_jmax=175°C
Gate source voltage
ESD Sensitivity (HBM) as per MIL-STD 883
V_GS
Power dissipation
T_A=25°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
P_tot
T_j , T_stg
Value
0.17
0.14
0.68
6
±20
Class 1
1.8
-55... +150
55/150/56
Unit
A
kV/µs
V
W
°C
Page 1
2003-02-21