BSP322P_11 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
Product Summary
V _DS
R _DS(on),max
I_D
BSP322P
-100 V
800 mΩ
-1 A
PG-SOT-223
Type
BSP322P
Package
PG-SOT-223
Tape and Reel Information
L6327: 1000 pcs/reel
Marking
BSP322P
Lead free
Yes
Packing
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
I_D
T _C=25 °C
T _C=70 °C
I _D,pulse T _C=25 °C
E _AS
I _D=-1 A, R _GS=25 Ω
V _GS
P _tot
T _C=25 °C
T _j, T _stg
ESD Class
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
Value
Unit
1
A
0.8
4
57
mJ
±20
V
1.8
W
-55 ... 150
°C
1A (250V to 500V)
260 °C
55/150/56
Rev 1.04
page 1
2011-04-05