BSP321P Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS Small-Signal-Transistor

SIPMOS^® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode
• Normal level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
BSP321P
Product Summary
V _DS
R _DS(on),max
I_D
-100 V
900 mΩ
-0.98 A
PG-SOT-223
Type
BSP321P
Package
PG-SOT-223
Tape and Reel Information
L6327: 1000 pcs/reel
Marking
BSP321P
Lead free
Yes
Packing
Non dry
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current
Symbol Conditions
I_D
T _C=25 °C
T _C=70 °C
I _D,pulse T _C=25 °C
Value
Unit
-0.98
A
-0.79
-3.9
Avalanche energy, single pulse
E _AS
I _D=-0.98 A, R _GS=25 Ω
57
mJ
Gate source voltage
Power dissipation
Operating and storage temperature
V _GS
P _tot
T _C=25 °C
T _j, T _stg
ESD Class
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
±20
V
1.8
W
-55 ... 150
°C
1A (250V to 500V)
260 °C
55/150/56
Rev 1.03
page 1
2009-02-16